| Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon film | |
|---|---|
| 學年 | 93 |
| 學期 | 1 |
| 出版（發表）日期 | 2004-11-01 |
| 作品名稱 | Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon film |
| 作品名稱（其他語言） | |
| 著者 | 王文竹 |
| 單位 | 淡江大學化學學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 85(18), pp.4022-4024 |
| 摘要 | This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C–Hn structure and Si–Hn bonds, which causes the Young’s modulus and hardness of the films to decrease with the increase of the Si content. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0003-6951 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/61586 ) |
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