| Monolithic n-type conductivity on low temperature grown freestanding ultrananocrystalline diamond films | |
|---|---|
| 學年 | 98 |
| 學期 | 2 |
| 出版（發表）日期 | 2010-06-01 |
| 作品名稱 | Monolithic n-type conductivity on low temperature grown freestanding ultrananocrystalline diamond films |
| 作品名稱（其他語言） | |
| 著者 | Joseph, P. T.; Tai, N. H.; Lin, I-Nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 97(4), 042107(3pages) |
| 摘要 | We report monolithic n-type conductivity on low-temperature (＜570 °C) grown ultrananocrystalline diamond (UNCD) films by Li-diffusion (about 255 nm) from LiNbO3 substrates. Low resistivity of 1.2 Ω cm with carrier concentration of −2×1020 cm−3 is obtained on freestanding UNCD films. The films bonded to Cu-tape show very low turn-on field of 4.2 V/μm with emission current density of above 0.3 mA/cm2 at a low applied filed of 10 V/μm. The n-type conductivity of low-temperature Li-diffused UNCD films overwhelms that of the high-temperature (≥800 °C) nitrogen doped ones and will make a significant impact to diamond-based electronics. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0003-6951; 1077-3118 |
| 期刊性質 | |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/58302 ) |
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