Spin-degenerate surface and the resonant spin lifetime transistor in wurtzite structures
學年 99
學期 1
出版（發表）日期 2010-10-01
作品名稱 Spin-degenerate surface and the resonant spin lifetime transistor in wurtzite structures
作品名稱（其他語言） 伍采結構之自旋分裂與共振自旋電晶體
著者 Wang, Wan-Tsang; Wu, C. L.; Chiang, J. C.; Lo, I-Kai; Kao, H. F.; Hsu, Y. C.; Pang, W. Y.; Jang, D. J.; Lee, Meng-En; Chang, Yia-Chung; Chen, Chun-Nan
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Journal of Applied Physics 108(8), 083718(4pages)
摘要 Spin-splitting energies of wurtzite AlN and InN are calculated using the linear combination of atomic orbital method, and the data are analyzed utilizing the two-band k⋅p model. It is found that in the k⋅p scheme, a spin-degenerate surface exists in the wurtzite Brillouin zone. Consequently, the D’yakonov-Perel’ spin relaxation mechanism can be effectively suppressed for all spin components in the [001]-grown wurtzite quantum wells (QWs) at a resonant condition through application of appropriate strain or a suitable gate bias. Therefore, wurtzite QWs (e.g., InGaN/AlGaN and GaN/AlGaN) are potential structures for spintronic devices such as the resonant spin lifetime transistor.
關鍵字
語言 en
ISSN 0021-8979 1089-7550
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Wang, Wan-Tsang; Chiang, J. C.; Lee, Meng-En
審稿制度
國別 USA
公開徵稿
出版型式 紙本 電子版
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