Apparatus of Ion Sensitive Thin Film Transistor and Method of Manufacturing of the Same
學年 93
學期 1
專利開始日期 2004-12-03
專利結束日期 2004-12-03
作品名稱 Apparatus of Ion Sensitive Thin Film Transistor and Method of Manufacturing of the Same
作品名稱（其他語言）
著者 蔡子萱; Tsai, Tzu-hsuan; Wu, Yung-fu
單位 淡江大學化學工程與材料工程學系
著錄名稱、卷期、頁數
描述 專利國別：美國 Pub. No.: US 2006/0035400 A1 Application number: 11/002282 國際分類號：H01L21/00; H01L23/58; H01L21/00; H01L23/58
摘要 The present invention discloses an apparatus of ion sensitive thin film transistor and method of manufacturing of the same. The apparatus of the invention, formed on a glass substrate, comprises an ion detector, formed on said glass substrate, including a plurality of ion sensitive transistors and a signal processor with display, also formed on said glass substrate, being coupled with said ion detector. The signal processor with display further comprises a circuit of signal processing, a driver circuit, and a display, wherein by means of the method of Low Temperature PolySilicon, i.e. LTPS technology, the invention integrates said ion detector and said signal processor with display on said glass substrate to become an tiny, light and thin apparatus with portable and disposable characteristics.
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