Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters | |
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學年 | 96 |
學期 | 2 |
出版(發表)日期 | 2008-04-01 |
作品名稱 | Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters |
作品名稱(其他語言) | |
著者 | Liou, Yan-lun; Liou, Jyun-cheng; Huang, Jin-hua; Tai, Nyan-Hwa; 林諭男; Lin, I. N. |
單位 | 淡江大學物理學系 |
出版者 | Elsevier |
著錄名稱、卷期、頁數 | Diamond and Related Materials 17(4-5), pp.776-781 |
摘要 | Field emission characteristics of ultra-nanocrystalline diamond (UNCD) have recently caught much attraction due to its importance in technological applications. In this work, we have fabricated lateral-field emitters comprised of UNCD films, which were deposited in CH4/Ar medium by microwave plasma-enhanced chemical vapor deposition method. The substrates, silicon-on-insulator (SOI) or SiO2-coated silicon, were pre-treated by mixed-powders-ultrasonication process for forming diamond nuclei to facilitate the synthesis of UNCD films on these substrates. Lateral electron field emitters can thus be fabricated either on silicon-on-insulator (SOI) or silicon substrates. The lateral emitters thus obtained possess large field enhancement factor (β = 1500–1721) and exhibit good electron field emission properties, regardless of the substrate materials used. The electron field emission can be turned on at 5.25–5.50 V/μm, attaining 5500–6000 mA/mm2 at 12.5 V/μm (100 V applied voltage). |
關鍵字 | Lateral emitter;Electron field emission;UNCD;MPECVD |
語言 | en |
ISSN | 0925-9635 |
期刊性質 | 國內 |
收錄於 | |
產學合作 | |
通訊作者 | |
審稿制度 | 否 |
國別 | TWN |
公開徵稿 | |
出版型式 | ,電子版 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/42028 ) |