| Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer | |
|---|---|
| 學年 | 94 |
| 學期 | 2 |
| 出版（發表）日期 | 2006-02-01 |
| 作品名稱 | Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer |
| 作品名稱（其他語言） | |
| 著者 | 林諭男; Lin, I-nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | Elsevier |
| 著錄名稱、卷期、頁數 | Diamond and Related Materials 15(2-3), pp.404-409 |
| 摘要 | The AlN thin films were deposited on ultra-nano-crystalline diamond films (UNCD) using a buffer layer for the purpose of increasing the adhesion between the layers, enhancing the (002) texture characteristics of the films and improving the surface morphology of the AlN on UNCD films. The TiN/Ti double layer performs markedly superior on improving these characteristics of UNCD thin films to the TiN (or Ti) single layer does, which is ascribed to the additive performance of the two layers, viz. the Ti-layer improves the adhesion of the layers, whereas the TiN-layer minimizes the interaction of AlN with the underlying layer. The AlN/TiN/Ti/UNCD thin films with highly preferred-orientation (rocking curve < 4°∼5°), ultra flat and smooth surface (roughness < 15 nm ) and good piezoelectric properties (d33 ∼4.9 pm/V), which were good enough for device application, was obtained. |
| 關鍵字 | MPECVD;AlN;UNCD;RF-sputtering;Buffer layer |
| 語言 | en |
| ISSN | 0925-9635 |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27473 ) |
GoogleAnalytics