| Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires | |
|---|---|
| 學年 | 96 |
| 學期 | 2 |
| 出版(發表)日期 | 2008-07-01 |
| 作品名稱 | Electron field emission properties on ultra-nano-crystalline diamond coated silicon nanowires |
| 作品名稱(其他語言) | |
| 著者 | Tzeng, Y. F.; Lee, C. Y.; Chiu, H. T.; Tai, N. H.; 林諭男; Lin, I-nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | Elsevier |
| 著錄名稱、卷期、頁數 | Diamond and Related Materials 17(7-10), pp.1817-1820 |
| 摘要 | Ultra-nano-crystalline diamond (UNCD) nano-emitters were prepared by coating UNCD films on the tip of silicon nanowire (SiNW) templates by microwave plasma-enhanced chemical vapor deposition process. The electron field emission properties of the UNCD/SiNW nano-emitters varied markedly with the pre-seeding process for the SiNW-templates. The direct ultrasonication process is more efficient in the formation of the diamond nuclei than the carburization/ultrasonication process, yielding UNCD/SiNWs nano-emitters with better electron field emission properties. The electron field emission can be turned on at (E0)UNCD/SiNW4 = 3.75 V/µm, yielding a large electron field emission current density of (Je)UNCD/SiNW4 = 11.22 mA/cm2 at an applied field of 9.75 V/µm. These characteristics are significantly better than those of bare SiNWs or planar UNCD films. |
| 關鍵字 | Electron field emission properties;Ultra-nano-crystalline diamond (UNCD);Silicon nanowires (SiNWs);UNCD nano-emitters |
| 語言 | en |
| ISSN | 0925-9635 |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/42033 ) |