| Effect of Mo-buffer layer on the growth behavior and the electron field emission properties of UNCD films | |
|---|---|
| 學年 | 97 |
| 學期 | 2 |
| 出版（發表）日期 | 2009-02-01 |
| 作品名稱 | Effect of Mo-buffer layer on the growth behavior and the electron field emission properties of UNCD films |
| 作品名稱（其他語言） | |
| 著者 | Liu, Keng-Fu; Chen, Li-Ju; Tai, Nyan-Hua; Lin, I-Nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | Lausanne: Elsevier S.A. |
| 著錄名稱、卷期、頁數 | Diamond and Related Materials 18(2-3), pp.181-185 |
| 摘要 | Mo-coating on Si-substrate is observed to significantly improve the formation kinetics of diamond nuclei and the growth behavior of ultra-nanocrystalline diamond (UNCD) films. Contrary to the phenomenon that diamond nuclei are only scarcely formed on bare Si-substrates leading to incomplete coverage of UNCD grains, the diamond nuclei (and the UNCD grains) are found to cover the whole surface of Mo-coated Si-substrates. While the Mo-coating markedly enhances the nucleation of diamonds, it degrades the electron field emission (EFE) properties of UNCD films. It is attributed to the conversion of the conducting Mo-metallic film into a resistive Mo2C layer during the microwave plasma CVD process. A sufficiently thick Mo-layer is found to enhance the nucleation of diamonds, while minimizing deleterious effect on their EFE properties with an improved turn-on-field of 13 V/μm and a current density of 55 μA/cm2 at the applied field of 30 V/μm. |
| 關鍵字 | Ultra-nanocrystalline diamond films; Mo-buffer layer; Nucleation behavior; Electron field emission properties |
| 語言 | en |
| ISSN | 0925-9635 |
| 期刊性質 | |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | Tai, Nyan-Hua |
| 審稿制度 | |
| 國別 | SWZ |
| 公開徵稿 | |
| 出版型式 | |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/42029 ) |
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