| 標題：Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy |
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| 學年 | 96 |
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| 學期 | 2 |
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| 出版（發表）日期 | 2008/07/01 |
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| 作品名稱 | Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy |
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| 作品名稱（其他語言） | |
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| 著者 | Chioiu, J. W.; Tsai, H. M; Pao, C. W.; Chien, F. Z.; Pong, W. F.; Chen, C. W.; Tsai, M.-H.; Wu, J. J.; Ko, C. H.; Chiang, H. H.; Lin, H.-J.; Lee, J. F.; Guo, J.-H. |
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| 單位 | 淡江大學物理學系 |
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| 出版者 | College Park: American Institute of Physics (AIP) |
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| 著錄名稱、卷期、頁數 | Journal of Applied Physics 104(1), pp.013709(4 pages) |
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| 摘要 | X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mgdoping in ZnOnanorods. The intensities of the features in the O K-edge XANES spectra of Zn1−xMgxOnanorods are lower than those of pure ZnOnanorods, suggesting that Mgdoping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mgdoping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the band gap. The band gap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements. |
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| 關鍵字 | conduction bands; energy gap; II-VI semiconductors; nanostructured materials; photoluminescence; semiconductor doping; spectral line intensity; valence bands; wide band gap semiconductors; XANES; X-ray emission spectra; zinc compounds |
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| 語言 | 英文 |
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| ISSN | 0021-8979;1089-7550 |
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| 期刊性質 | |
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| 收錄於 | |
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| 產學合作 | |
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| 通訊作者 | Chioiu, J. W. |
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| 審稿制度 | |
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| 國別 | 美國 |
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| 公開徵稿 | |
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| 出版型式 | 紙本;電子版 |
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| 相關連結 | |
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| SDGs | |
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