教師資料查詢 | 類別: 期刊論文 | 教師: 鄭伯昆 TSENG POH-KUN (瀏覽個人網頁)

標題:A study of porous silicon prepared under different HF concentrations by positron annihilation
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學期
出版(發表)日期1998/01/05
作品名稱A study of porous silicon prepared under different HF concentrations by positron annihilation
作品名稱(其他語言)
著者Huang, C. C.; Chang, I. M.; Huang, J. H.; Fan, J. C.; Chen, Y. F.; 鄭伯昆; Tseng, P. K.
單位淡江大學物理學系
出版者Elsevier
著錄名稱、卷期、頁數Physics Letters A 237(3), pp.183-188
摘要Two-dimensional angular correlation of positron-electron annihilation radiation and positron-lifetime experiments have been performed on lightly doped porous silicons prepared under different HF concentrations. Positronium formation in the etched pores and positron trapped in voids are observed in both experiments. A surprising result is found that both positron lifetime and momentum spectra show a reduction in the size of the etched pores with decreasing HF concentration in the etching solution. This trend is different from the intuitive expectation that the pore size increases with increasing porosity. Our result can be explained in terms of the formation mechanism of porous film in lightly doped silicon.
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語言英文
ISSN0375-9601
期刊性質國內
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國別中華民國
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