| A study of porous silicon prepared under different HF concentrations by positron annihilation | |
|---|---|
| 學年 | 86 |
| 學期 | 1 |
| 出版（發表）日期 | 1998-01-05 |
| 作品名稱 | A study of porous silicon prepared under different HF concentrations by positron annihilation |
| 作品名稱（其他語言） | |
| 著者 | Huang, C. C.; Chang, I. M.; Huang, J. H.; Fan, J. C.; Chen, Y. F.; 鄭伯昆; Tseng, P. K. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Elsevier |
| 著錄名稱、卷期、頁數 | Physics Letters A 237(3), pp.183-188 |
| 摘要 | Two-dimensional angular correlation of positron-electron annihilation radiation and positron-lifetime experiments have been performed on lightly doped porous silicons prepared under different HF concentrations. Positronium formation in the etched pores and positron trapped in voids are observed in both experiments. A surprising result is found that both positron lifetime and momentum spectra show a reduction in the size of the etched pores with decreasing HF concentration in the etching solution. This trend is different from the intuitive expectation that the pore size increases with increasing porosity. Our result can be explained in terms of the formation mechanism of porous film in lightly doped silicon. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0375-9601 |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27874 ) |
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