教師資料查詢 | 類別: 期刊論文 | 教師: 薛宏中 Hsueh, Hung-chung (瀏覽個人網頁)

標題:Compression Mechanisms in Highly Anisotropic Semiconductors
學年
學期
出版(發表)日期1999/01/01
作品名稱Compression Mechanisms in Highly Anisotropic Semiconductors
作品名稱(其他語言)
著者薛宏中; Hsueh, H. C.; Crain, J.
單位淡江大學物理學系
出版者Wiley-Blackwell
著錄名稱、卷期、頁數Physica Status Solidi. B, Basic research 211(1), pp.365-372
摘要We examine in detail the effect of hydrostatic compression on anisotropic semiconductors which, at ambient conditions, are characterised by the coexistence of both weak and strong cohesive forces. We focus on elucidating the response to compression of the structural, vibrational and electronic properties in quasi-two-dimensional layered materials and quasi-molecular solids. Results for layered IV–VI semiconductors (GeS and GeSe) and members of the quasi-molecular Group-V metal triiodides AsI3 are reported. Our methodology combines X-ray powder diffraction, Raman spectroscopy and ab initio electronic structure simulations. We demonstrate that compression in this class of material leads to complex compression mechanisms favouring more isotropically bonded phases, to gradual breakdown of low-frequency rigid unit vibrations and to unusual electron charge transfer effects which are reflected in non-monotonic variations of vibrational frequencies with pressure.
關鍵字
語言英文
ISSN0370-1972
期刊性質國內
收錄於SCI;
產學合作
通訊作者H. C. Hsueh
審稿制度
國別中華民國
公開徵稿
出版型式,電子版,紙本
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