Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation
學年 96
學期 2
出版（發表）日期 2008-07-01
作品名稱 Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation
作品名稱（其他語言）
著者 Joseph, P.T.; Tai, N. H.; Niu, H.; Palnitkar, U. A.; Pong, W. F.; Cheng, H. F.; Lin, I-Nan
單位 淡江大學物理學系
出版者 Lausanne: Elsevier S.A.
著錄名稱、卷期、頁數 Diamond and Related Materials 17(7-10), pp.1812-1816
摘要 Nitrogen (N) ion implantation induced modification on structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were reported. Low dose ion implantation slightly improved the EFE properties of UNCD films mainly due to the formation of defects and annealing brought the EFE parameters back to original state by eliminating the defects. Conversely, high dose ion implantation markedly enhanced the EFE properties for UNCD films possibly due to the induction of amorphous carbons for the UNCD films. The annealing process converts the amorphous phase into a more stable graphitic one such that the EFE properties persisted even after the annealing process.
關鍵字 UNCD; Ion implantation; Electron field emission
語言 en
ISSN 0925-9635
期刊性質 國外
收錄於 SCI EI
產學合作
通訊作者 Lin, I-nan
審稿制度 是
國別 CHE
公開徵稿
出版型式 紙本
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/42039 )

機構典藏連結