Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy
學年 96
學期 1
出版（發表）日期 2008-01-01
作品名稱 Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy
作品名稱（其他語言）
著者 Tsai, H. M.; Ray, S. C.; Pao, C. W.; Chiou, J. W.; Huang, C. L.; Du, C. H.; Pong, W. F.; Tsai, M.-H.; Fukano, A.; Oyanagi, H.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Journal of Applied Physics 103(1), pp.013704(4 pages)
摘要 The dielectric properties associated with the electronic and bonding structures of SiO2 films were examined using the Si L3,2- and O K-edge x-ray absorption near-edge structures (XANES) and valence-band photoemission spectroscopy (VB-PES) techniques. The Si L3,2- and O K-edge XANES measurements for the low-temperature grown UV-photon oxidized SiO2 (UV-SiO2) and the conventional high-temperature thermal-oxidized SiO2 (TH-SiO2) suggest enhancement of O 2p–Si 3p hybridization in UV-SiO2. VB-PES measurements reveal enhancement of nonbonding O 2p and O 2p–Si 3p hybridized states. The enhanced O 2p and Si 3p hybridization implies a shortening of the average Si–O bond length, which explains an increase of the density and the improvement of the dielectric property of UV-SiO2.
關鍵字 bond lengths; high-k dielectric thin films; permittivity; photoelectron spectra; silicon compounds; valence bands; XANES
語言 en
ISSN 0021-8979
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Pong, W. F.
審稿制度
國別 USA
公開徵稿
出版型式 紙本
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