教師資料查詢 | 類別: 期刊論文 | 教師: 李明憲 LEE, MING-HSIEN (瀏覽個人網頁)

標題:Band gap modification of single-walled carbon nanotube and boron nitride nanotube under a transverse electric field
學年
學期
出版(發表)日期2004/12/01
作品名稱Band gap modification of single-walled carbon nanotube and boron nitride nanotube under a transverse electric field
作品名稱(其他語言)
著者Chen, Chun-wei; Lee, Ming-hsien; Clark, S.-J.
單位淡江大學物理學系
出版者Institute of Physics (IOP)
著錄名稱、卷期、頁數Nanotechnology 15(12), pp.1837-1843
摘要The electronic structures of carbon (C) and boron nitride (BN) nanotubes under a transverse electric field were investigated through the first-principles pseudopotential density-functional theory (DFT) calculations. It was found that band gap modifications occur both in the semiconducting C and BN nanotubes under an external electric field by inducing a semiconductor–metal transition. The variations of the band gap sizes with transverse electric fields are very different between C and BN nanotubes. In the semiconducting C nanotube, a sharp semiconductor–metal transition does not occur until a threshold electric field is achieved; the BN nanotube, on the other hand, shows a gradual reduction of the band gap size once an external electric field is applied due to the larger ionicity of BN bonds. In addition, the semiconductor–metal transition in both C and BN nanotubes occurs at a lower value of electric field with increasing diameter. The ability to tune the band gap in both C and BN nanotubes by an external electric field provides the possibility for future electronic and electro-optic nanodevice applications.
關鍵字electrical; magnetic and optical; Nanoscale science and low-D systems
語言英文
ISSN0957-4484;1361-6528
期刊性質國外
收錄於SCI
產學合作
通訊作者Chen, Chun-wei
審稿制度
國別英國
公開徵稿
出版型式紙本;電子版
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