Spin-splitting in an AlxGa1−xN/GaN nanowire for a quantum-ring interferometer
學年 97
學期 1
出版(發表)日期 2008-09-01
作品名稱 Spin-splitting in an AlxGa1−xN/GaN nanowire for a quantum-ring interferometer
著者 Lo, Ikai; Pang, Wen-yuan; Chen, Yen-liang; Hsu, Yu-chi; Chiang, Jih-chen; Lin, Wei-hsin; Chiu, Wan-ting; Tsai, Jenn-kai; 陳俊男; Chen, Chun-nan
單位 淡江大學物理學系
出版者 American Institute of Physics (AIP)
著錄名稱、卷期、頁數 Applied Physics Letters 93(13), pp.132114(3 pages)
摘要 The authors thank M. H. Gau, C. H. Hsieh, C. C Yang, R. Y. Su, and C. H. Chen for their assistance. The project was supported by National Science Council and Core Facilities Laboratory in Kaohsiung-Pingtung Area, Taiwan. The authors are also grateful to W. C. Mitchel and M. Mah for their help and AFOSR/AOARD, USAF for financial support under Grant No. FA4869-07-1-4022. An Al0.18Ga0.82N/GaN heterostructure was used to fabricate a ballistic nanowire with a wire width of 200 nm by focused ion beam. We observed the beating Shubnikov–de Haas oscillations in the nanowire with a spin-splitting energy of 2.40.3 meV. Based on the results, we proposed a spin-Hall quantum-ring interferometer made of AlxGa1−xN/GaN nanowires for spintronic applications. ©
關鍵字 aluminium compounds; focused ion beam technology; gallium compounds; III-V semiconductors; nanowires; semiconductor heterojunctions; semiconductor quantum wires; Shubnikov-de Haas effect; spin-orbit interactions; wide band gap semiconductors
語言 en
ISSN 0003-6951
出版型式 紙本

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/50352 )