| Spin-splitting in an AlxGa1−xN/GaN nanowire for a quantum-ring interferometer | |
|---|---|
| 學年 | 97 |
| 學期 | 1 |
| 出版（發表）日期 | 2008-09-01 |
| 作品名稱 | Spin-splitting in an AlxGa1−xN/GaN nanowire for a quantum-ring interferometer |
| 作品名稱（其他語言） | |
| 著者 | Lo, Ikai; Pang, Wen-yuan; Chen, Yen-liang; Hsu, Yu-chi; Chiang, Jih-chen; Lin, Wei-hsin; Chiu, Wan-ting; Tsai, Jenn-kai; 陳俊男; Chen, Chun-nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | American Institute of Physics (AIP) |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 93(13), pp.132114(3 pages) |
| 摘要 | The authors thank M. H. Gau, C. H. Hsieh, C. C Yang, R. Y. Su, and C. H. Chen for their assistance. The project was supported by National Science Council and Core Facilities Laboratory in Kaohsiung-Pingtung Area, Taiwan. The authors are also grateful to W. C. Mitchel and M. Mah for their help and AFOSR/AOARD, USAF for financial support under Grant No. FA4869-07-1-4022. An Al0.18Ga0.82N/GaN heterostructure was used to fabricate a ballistic nanowire with a wire width of 200 nm by focused ion beam. We observed the beating Shubnikov–de Haas oscillations in the nanowire with a spin-splitting energy of 2.40.3 meV. Based on the results, we proposed a spin-Hall quantum-ring interferometer made of AlxGa1−xN/GaN nanowires for spintronic applications. © |
| 關鍵字 | aluminium compounds; focused ion beam technology; gallium compounds; III-V semiconductors; nanowires; semiconductor heterojunctions; semiconductor quantum wires; Shubnikov-de Haas effect; spin-orbit interactions; wide band gap semiconductors |
| 語言 | en |
| ISSN | 0003-6951 |
| 期刊性質 | |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/50352 ) |
GoogleAnalytics