教師資料查詢 | 類別: 期刊論文 | 教師: 王伯昌WANG, BO-CHENG (瀏覽個人網頁)

標題:Oligofluorene-thiophene derivatives as high performance semiconductors for organic thin film transistors
學年91
學期2
出版(發表)日期2003/03/01
作品名稱Oligofluorene-thiophene derivatives as high performance semiconductors for organic thin film transistors
作品名稱(其他語言)
著者Meng, H.; Zheng, J.; Lovinger, A. J.; 王伯昌; Wang, Bo-cheng
單位淡江大學化學學系
出版者American Chemical Society (ACS)
著錄名稱、卷期、頁數Chemistry of materials 15(9), pp.1778-1787
摘要A series of alkyl chain end-capped oligofluorene−thiophenes have been prepared with high yields using Suzuki or Stille coupling reactions. The electronic and optical properties of the thin films deposited at different substrate temperatures have been investigated. Morphological studies using transmission electron microscopy (TEM) revealed well-interconnected microcrystalline domains in these thin films. X-ray diffraction measurements of the vacuum-evaporated films showed enhanced crystalline order with increasing substrate deposition temperature. Thermal analysis as well as electrochemical measurements of the materials indicated that the new oligomers have high thermal and oxidative stability. Highly ordered polycrystalline vacuum-evaporated films with charge carrier mobility as high as 0.12 cm2 V-1 s-1 have been achieved with 5,5‘-bis(7-hexyl-9H-fluoren-2-yl)-2,2‘-bithiophene (DHFTTF). Thin film field-effect transistor (TFT) devices made from these materials showed remarkable stability even after UV (366 nm) irradiation for more than 48 h in air. The semiconductors exhibit high on/off ratios (up to 105) and no significant decrease in mobility and on/off ratio over several months in air with exposure to ambient light. Finally, bright emission colors from greenish yellow to orange-red were observed in this new series of oligomer solid films excited with UV light (366 nm). In addition, a comparative study of the newly synthesized oligomers with α,α‘-dihexylsexithiophene (DH6T), one of the most widely investigated oligothiophenes, is presented. The current approach to the molecular design can be applied toward the rational design of new TFT materials.
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語言英文(美國)
ISSN0897-4756
期刊性質國外
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國別美國
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