| 標題：Microstructure and electronic properties of ultra-nano-crystalline-diamond thin films |
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| 學年 | 108 |
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| 學期 | 2 |
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| 出版（發表）日期 | 2020/07/01 |
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| 作品名稱 | Microstructure and electronic properties of ultra-nano-crystalline-diamond thin films |
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| 作品名稱（其他語言） | |
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| 著者 | R.W. Thoka; S.J. Moloi; Sekhar C. Ray; W. F. Pong; I.-N. Lin |
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| 單位 | |
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| 出版者 | |
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| 著錄名稱、卷期、頁數 | Journal of Electron Spectroscopy and Related Phenomena 242, 146968 |
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| 摘要 | Ultra-nano-crystalline diamond (UNCD) thin films with average thickness ∼200 nm, were grown on n-type mirror polished silicon (100) substrates using microwave plasma enhanced chemical vapour deposition system in different gas (H2 - N2 - Ar - CH4) composition plasma atmospheres at 1200 W (2.45 GHz) and in a pressure of 120 Torr with plasma-temperature ∼475 °C. Raman spectroscopy was used for microstructural study and nano-indentation was used for Hardness/Young’s modulus study; whereas X-ray absorption near edge structure, X-ray photoelectron and ultraviolet photoemission spectroscopies were used for electronic structure of UNCD thin films. The hardness of the films is found to be ∼30 GPa, Young’s modulus ∼300 GPa and induced electron field emission, the turn on electric field, ETOE = 11 V/μm. All results show that the UNCD could be useful for different industrial semiconductor/optoelectronic devices and as flexible materials for thin film coating technology. |
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| 關鍵字 | UNCD;Raman spectroscopy;Hardness/Young’s modulus;XPS/UPS |
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| 語言 | 英文(美國) |
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| ISSN | 1873-2526 |
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| 期刊性質 | 國外 |
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| 收錄於 | SCI; |
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| 產學合作 | |
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| 通訊作者 | |
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| 審稿制度 | 否 |
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| 國別 | 美國 |
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| 公開徵稿 | |
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| 出版型式 | ,電子版,紙本 |
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| 相關連結 | |
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| SDGs | |
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