教師資料查詢 | 類別: 期刊論文 | 教師: 薛宏中 Hsueh, Hung-chung (瀏覽個人網頁)

標題:Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application
學年108
學期2
出版(發表)日期2020/04/14
作品名稱Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application
作品名稱(其他語言)
著者Ching-Hwa Ho; Wen-Yao Lin; Liang-Chiun Chao; Kuei-Yi Lee; Jun Inagaki; Hung-Chung Hsueh
單位
出版者
著錄名稱、卷期、頁數ACS Applied Energy Materials 3(5), 4896−4905
摘要SnS and SnSe are renowned energy materials that are applied for
photoelectric and thermoelectric conversions owing to their suitable band gap, close
to 1 eV, and superior figure of merit (ZT), larger than 0.1. In this paper, high-quality
layered SnX (X = S, Se) crystals have been successfully grown by the chemical vapor
transport (CVT) method. The crystal structure and band structure of SnX are
studied, and their photoelectric and thermoelectric properties are characterized. In
Raman measurement, four vibration modes with distinct angle-polarization
dependence are simultaneously detected by both SnS and SnSe, verifying their
similar orthorhombic layered structure with in-plane anisotropy. In-plane anisotropy
of band-edge and interband transitions along a and b axes has also been measured
experimentally using polarized thermoreflectance (PTR) from 0.7 to 5 eV. The
anisotropic band edges of layered SnX (X = S, Se) are well matched and reproduced
by first-principles calculation. Hall-effect and thermoelectric measurements revealed
that SnX are p-type semiconductors with a high carrier density, larger than 1017 cm−3. According to the measurement results of the
surface photovoltaic (SPV) response and ZT value, layered SnS can have a superior SPV (8.5 μV/μW) response ∼12× higher than
that of SnSe, while SnSe has a ZT of 0.16, ∼4× larger than that of SnS in SnX (X = S, Se). Layered SnSe and SnS could possess great
feasibility for application in thermoelectric power generation and solar energy conversion.
關鍵字2D semiconductor;thermoelectric material;solar-cell material;band structure;in-plane anisotropy
語言英文(美國)
ISSN2574-0962
期刊性質國外
收錄於SCI;SSCI;
產學合作
通訊作者Ching-Hwa Ho and Hung-Chung Hsueh(薛宏中)
審稿制度
國別美國
公開徵稿
出版型式,電子版,紙本
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