Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application
學年 108
學期 2
出版（發表）日期 2020-05-26
作品名稱 Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application
作品名稱（其他語言）
著者 Ching-Hwa Ho; Wen-Yao Lin; Liang-Chiun Chao; Kuei-Yi Lee; Jun Inagaki; Hung-Chung Hsueh
單位
出版者
著錄名稱、卷期、頁數 ACS Applied Energy Materials 3(5), p.4896−4905
摘要 SnS and SnSe are renowned energy materials that are applied for photoelectric and thermoelectric conversions owing to their suitable band gap, close to 1 eV, and superior figure of merit (ZT), larger than 0.1. In this paper, high-quality layered SnX (X = S, Se) crystals have been successfully grown by the chemical vapor transport (CVT) method. The crystal structure and band structure of SnX are studied, and their photoelectric and thermoelectric properties are characterized. In Raman measurement, four vibration modes with distinct angle-polarization dependence are simultaneously detected by both SnS and SnSe, verifying their similar orthorhombic layered structure with in-plane anisotropy. In-plane anisotropy of band-edge and interband transitions along a and b axes has also been measured experimentally using polarized thermoreflectance (PTR) from 0.7 to 5 eV. The anisotropic band edges of layered SnX (X = S, Se) are well matched and reproduced by first-principles calculation. Hall-effect and thermoelectric measurements revealed that SnX are p-type semiconductors with a high carrier density, larger than 1017 cm−3. According to the measurement results of the surface photovoltaic (SPV) response and ZT value, layered SnS can have a superior SPV (8.5 μV/μW) response ∼12× higher than that of SnSe, while SnSe has a ZT of 0.16, ∼4× larger than that of SnS in SnX (X = S, Se). Layered SnSe and SnS could possess great feasibility for application in thermoelectric power generation and solar energy conversion.
關鍵字 2D semiconductor;thermoelectric material;solar-cell material;band structure;in-plane anisotropy
語言 en_US
ISSN 2574-0962
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Ching-Hwa Ho and Hung-Chung Hsueh(薛宏中)
審稿制度 是
國別 USA
公開徵稿
出版型式 ,電子版,紙本
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