教師資料查詢 | 類別: 期刊論文 | 教師: 林大欽 LING, DAH-CHIN (瀏覽個人網頁)

標題:Photoluminescence of CuInSe2/GaN and CuInSe2/InN
學年108
學期1
出版(發表)日期2019/09/01
作品名稱Photoluminescence of CuInSe2/GaN and CuInSe2/InN
作品名稱(其他語言)
著者Phoebe Nicole G. Perez; Cheng-Chang Yu; Cheng-Hung Shih; Chen-Chi Yang; Emmanuel A. Florido; Dah-Chin Ling; Der-Jun Jang
單位
出版者
著錄名稱、卷期、頁數Journal of Luminescence 213, p.364-369
摘要The power and temperature dependent photoluminescence (PL) of epitaxially grown In-rich CuInSe2 (CIS) and Cu-rich CIS deposited on N-polar GaN and InN were investigated in this paper. The In-rich CIS/GaN has two PL emissions characterized by a donor-acceptor pair (DAP) peak at 0.92 eV and an excitonic peak at 1.08/1.1 eV. On the other hand, the Cu-rich CIS/GaN has four PL emissions characterized by two DAP peaks at 0.86 eV and 0.94 eV, free-to-bound recombination peak at 0.97 eV and an excitonic peak at 1.03 eV. Identification of these defects in the CIS absorber layer is crucial for the improvement of the device efficiency. The PL emission of the CIS/InN closely resembles that of the Cu-rich CIS/GaN. For all the samples, the PL intensity increased with excitation power while the PL intensity decreased with temperature. The obtained power coefficients and activation energies support the proposed mechanism causing the luminescence. The defects present in CIS/GaN and CIS/InN were also identified. The results from this study are consistent with those of CIS single crystals and show that the CIS absorber layer can be incorporated with III-nitride materials, and its absorption can be extended beyond the spectrum covered by plain CIS.
關鍵字Photoluminescence;Copper indium diselenide;Gallium nitride;Indium nitride;Solar cell absorber
語言英文(美國)
ISSN
期刊性質國外
收錄於SCI;
產學合作
通訊作者Der-Jun Jang
審稿制度
國別荷蘭
公開徵稿
出版型式,電子版,紙本
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