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標題:Controlled Low-Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration
學年106
學期1
出版(發表)日期2017/12/05
作品名稱Controlled Low-Frequency Electrical Noise of Monolayer MoS2 with Ohmic Contact and Tunable Carrier Concentration
作品名稱(其他語言)
著者Ji-Wun Wang, Yen-Po Liu, Po-Han Chen, Meng-Hsi Chuang, Atiye Pezeshki, Dah-Chin Ling, Jeng-Chung Chen, Yung-Fu Chen, and Yi-Hsien Lee
單位
出版者
著錄名稱、卷期、頁數Adv. Electron. Mater. 3, 1700340 (2017)
摘要Semiconducting monolayers of transition metal dichalcogenides (TMDs) are considered as emergent materials for nanodevices and optoelectronic applications. The low-frequency electrical noise of TMD-based devices is much higher than Si and other conventional semiconductors. The reduction of this noise along with control of the Ohmic contact and carrier concentration of the such devices remain major challenges. Here, the low-frequency (1/f) noise and transport properties of chemical-vapor-deposition-grown MoS2 are presented. The high mobility of 20–40 cm2 V−1 s−1 of the monolayer devices is highly reproducible. Reliable methods to induce Ohmic contact and to tune carrier density over a wide range of 1011–1014 cm−2 are presented to study the fundamental mechanism of the 1/f noise. The noise performance in the high carrier concentration regime is explored for the first time with Ohmic contact of the devices and ideal sample quality. A significant reduction of the noise figure of merit is achievable in the high-density regime. Polymer electrolyte encapsulation provides a practical method to effectively tune carrier density and engineer surface trap states of the monolayer TMDs, which would be helpful for practical applications of 2D atomic layers in nanoelectronics and photonics.
關鍵字2D material, 1/f noise
語言英文(美國)
ISSN2199-160X
期刊性質國外
收錄於SCI;
產學合作
通訊作者
審稿制度1
國別美國
公開徵稿
出版型式,電子版,紙本
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