教師資料查詢 | 類別: 期刊論文 | 教師: 莊程豪 CHENG-HAO CHUANG (瀏覽個人網頁)

標題:Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1−xO2 (x = 0--0.1)
學年101
學期1
出版(發表)日期2012/12/07
作品名稱Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1−xO2 (x = 0--0.1)
作品名稱(其他語言)
著者Shashi B. Singh; L. T. Yang; Y. F. Wang; Y. C. Shao; C. W. Chiang; J. W. Chiou; K. T. Lin; S. C. Chen; B. Y. Wang; C. H. Chuang; D. C. Ling; W. F. Pong; M.-H. Tsai; H. M. Tsai; C. W. Pao; H. W. Shiu; C. H. Chen; H.-J. Lin; J. F. Lee; H. Yamane; N. Kosugi
單位
出版者
著錄名稱、卷期、頁數Phys. Rev. B 86, 241103(R)
摘要The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr1−xO2
(x = 0−0.1) compounds was investigated using O K-, Cu, and Cr L3,2-edge x-ray absorption near-edge structure
(XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra
reveal a gradual increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr deficiency x, whereas, the
valence of Cr remains constant as Cr3+. These results indicate that the p-type conductivity in the CuCr1−xO2
samples is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct Cu1+-Cu2+ hole mechanism. Remarkable
Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band
maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally
activated (TA) hopping to a combination of TA and Mott’s three-dimensional variable range hopping occurs
around 250 K.
關鍵字
語言英文
ISSN
期刊性質國外
收錄於
產學合作
通訊作者
審稿制度
國別英國
公開徵稿
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