標題:Electronic and atomic structures of the Sr3Ir4Sn13 single crystal: A possible charge density wave material |
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學年 | 105 |
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學期 | 1 |
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出版(發表)日期 | 2017/01/20 |
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作品名稱 | Electronic and atomic structures of the Sr3Ir4Sn13 single crystal: A possible charge density wave material |
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作品名稱(其他語言) | |
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著者 | Wang, H.-T.; Srivastava, M.K.; Wu, C.-C.; Hsieh, S.-H.; Wang, Y.-F.; Shao, Y.-C.; Liang, Y.-H.; Du, C.-H.; Chiou, J.-W.; Cheng, C.-M.; Chen, J.-L.; Pao, C.-W.; Lee, J.-F.; Kuo, C.N.; Lue, C.S.; Wu, M.-K.; Pong, W.-F. |
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著錄名稱、卷期、頁數 | Scientific Reports 7, pp.40886(9 pages) |
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摘要 | X-ray scattering (XRS), x-ray absorption near-edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) spectroscopic techniques were used to study the electronic and atomic structures of the high-quality Sr3Ir4Sn13 (SIS) single crystal below and above the transition temperature (T* ≈ 147 K). The evolution of a series of modulated satellite peaks below the transition temperature in the XRS experiment indicated the formation of a possible charge density wave (CDW) in the (110) plane. The EXAFS phase derivative analysis supports the CDW-like formation by revealing different bond distances [Sn1(2)-Sn2] below and above T* in the (110) plane. XANES spectra at the Ir L3-edge and Sn K-edge demonstrated an increase (decrease) in the unoccupied (occupied) density of Ir 5d-derived states and a nearly constant density of Sn 5p-derived states at temperatures T < T* in the (110) plane. These observations clearly suggest that the Ir 5d-derived states are closely related to the anomalous resistivity transition. Accordingly, a close relationship exists between local electronic and atomic structures and the CDW-like phase in the SIS single crystal. |
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語言 | 英文 |
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ISSN | |
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期刊性質 | 國外 |
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收錄於 | SCI; |
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產學合作 | |
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審稿制度 | 否 |
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國別 | 英國 |
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公開徵稿 | |
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出版型式 | ,電子版 |
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