教師資料查詢 | 類別: 期刊論文 | 教師: 薛宏中 Hsueh, Hung-chung (瀏覽個人網頁)

標題:Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment
學年84
學期2
出版(發表)日期1996/06/01
作品名稱Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment
作品名稱(其他語言)
著者Hsueh, H. C.; M. C. Warren; H. Vass; G. J. Ackland; S. J. Clark; J. Crain
單位
出版者
著錄名稱、卷期、頁數Phys. Rev. B 53(22), pp.14806-14817
摘要The structural and vibrational properties of the prototypical layered semiconductor germanium sulfide (GeS) have been studied under pressure using a combination of high-resolution x-ray powder diffraction, Raman scattering, and ab initio simulation. The theoretically and experimentally determined pressure response of the static and dynamical properties are in good agreement with each other. No structural phase transformation is found up to 94 kbar. Inspection of the calculated eigenvectors of zone center phonons at several pressures indicates that the validity of the rigid-layer mode approximation is appropriate only at near-ambient pressure conditions and breaks down under compression.
關鍵字
語言英文
ISSN
期刊性質國外
收錄於
產學合作
通訊作者
審稿制度
國別美國
公開徵稿
出版型式,電子版,紙本
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