教師資料查詢 | 類別: 期刊論文 | 教師: 董崇禮 CHUNG-LI DONG (瀏覽個人網頁)

標題:Synthesis of hybrid diamond films via two-step microwave enhanced chemical vapor deposition process for enhancing the electron field emission properties
學年105
學期1
出版(發表)日期2016/09/13
作品名稱Synthesis of hybrid diamond films via two-step microwave enhanced chemical vapor deposition process for enhancing the electron field emission properties
作品名稱(其他語言)
著者Adhimoorthy Saravanan; Bohr-Ran Huang; Divinah Manoharan; Chung-Li Dong; I-Nan Lin
單位
出版者
著錄名稱、卷期、頁數Diamond and Related Materials 63, pp.211-217
摘要Hybrid diamond materials (HBDs) were synthesized using a two-step bias enhanced nucleation and growth process (BEN-BEG). The secondary BEG process efficiently altered the granular structure of the underlying ultrananocrystalline diamond (UNCD) films, rather than growing a nanocrystalline diamond (NCD) film on the top of the UNCD layer. Nanographite clusters were formed when the coalescence of ultra-small diamond grains was induced due to the secondary BEG process that enhanced the transport efficiency of electrons and thus improved the electron field emission (EFE) properties of the HBD films. However, the depth of interaction increased with the magnitude of the bias voltage applied in the secondary BEG process. Therefore, large enough bias voltage (− 300 V) is required in the secondary BEG process to convert the whole thickness of UNCD films into HBD ones. The EFE properties of HBD− 300 V films can be turned on at a low field of E0 = 3.36 V/μm and attained a high EFE current density of Je = 4.57 mA/cm2 at an applied field of 6.4 V/μm. The synthesis of HBD films with high conductivity and excellent EFE behavior enables them to be better EFE emitters with improved performance in flat panel display applications.
關鍵字Hybrid diamond films;Bias-enhanced growth process;Electron field emission properties;Nanographite
語言英文
ISSN0925-9635
期刊性質國外
收錄於SCI;
產學合作
通訊作者I-Nan Lin
審稿制度
國別瑞士
公開徵稿
出版型式,電子版,紙本
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