教師資料查詢 | 類別: 期刊論文 | 教師: 許世杰 Hsu, Shih-chieh (瀏覽個人網頁)

標題:The study of wet etching on GaN surface by potassium hydroxide solution
學年105
學期2
出版(發表)日期2017/06/01
作品名稱The study of wet etching on GaN surface by potassium hydroxide solution
作品名稱(其他語言)
著者Lai, Yung-Yu; Hsu, Shih-Chieh; Chang, Hua-Sheng; Wu, YewChung Sermon; Chen, Ching-Hsiang; Chen, Liang-Yih; Cheng, Yuh-Jen
單位
出版者
著錄名稱、卷期、頁數Research on Chemical Intermediates 43(6), p.3563–3572
摘要Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260 °C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process. By multiplying the planar density and the number of dangling bonds on the N atom, we proposed the etching barrier index (EBI) to describe the difficulty degree of each lattice facet. The raking of EBI will be +c-plane > a-plane > m-plane > −c-plane > (10-1-1) plane > r-plane. Combining the EBI with SEM results, we thoroughly studied the whole etching process. We confirmed that in our research, KOH wet etching on GaN starts from the r-plane instead of the +c-plane or −c-plane, which differs from other studies. We also found that during the high-temperature etching process, there are two etching approaches. In one, the etching begins vertically from the top to the bottom, then horizontally, and finally reversely from the bottom to the top. In the other, etching pits will develop into a hexagonal hole of the sidewall of m-plane.
關鍵字Wet etching;KOH;GaN;LED
語言英文
ISSN0922-6168;1568-5675
期刊性質國外
收錄於SCI;
產學合作
通訊作者Hsu, Shih-Chieh
審稿制度
國別荷蘭
公開徵稿
出版型式,電子版,紙本
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