教師資料查詢 | 類別: 期刊論文 | 教師: 林大欽 LING, DAH-CHIN (瀏覽個人網頁)

標題:Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure
學年103
學期2
出版(發表)日期2015/04/14
作品名稱Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure
作品名稱(其他語言)
著者Antaryami Mohanta; Wang, Shiang-Fu; Young, Tai-Fa; Yeh, Ping-Hung; Ling, Dah-Chin; Lee, Meng-En; Jang, Der-Jun
單位淡江大學物理學系
出版者Melville: A I P Publishing LLC
著錄名稱、卷期、頁數Journal of Applied Physics 117(14), 144503
摘要Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τr, extracted from the TRPL profile shows ∼T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.
關鍵字
語言英文(美國)
ISSN0021-8979
期刊性質國外
收錄於SCI;
產學合作
通訊作者Jang, Der-Jun
審稿制度
國別美國
公開徵稿
出版型式,紙本
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