Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure
學年 103
學期 2
出版（發表）日期 2015-04-14
作品名稱 Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure
作品名稱（其他語言）
著者 Antaryami Mohanta; Wang, Shiang-Fu; Young, Tai-Fa; Yeh, Ping-Hung; Ling, Dah-Chin; Lee, Meng-En; Jang, Der-Jun
單位 淡江大學物理學系
出版者 Melville: A I P Publishing LLC
著錄名稱、卷期、頁數 Journal of Applied Physics 117(14), 144503
摘要 Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τr, extracted from the TRPL profile shows ∼T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.
關鍵字
語言 en_US
ISSN 0021-8979
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Jang, Der-Jun
審稿制度 否
國別 USA
公開徵稿
出版型式 ,紙本
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