| 標題：Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure |
|---|
| 學年 | 103 |
|---|
| 學期 | 2 |
|---|
| 出版（發表）日期 | 2015/04/14 |
|---|
| 作品名稱 | Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure |
|---|
| 作品名稱（其他語言） | |
|---|
| 著者 | Antaryami Mohanta; Wang, Shiang-Fu; Young, Tai-Fa; Yeh, Ping-Hung; Ling, Dah-Chin; Lee, Meng-En; Jang, Der-Jun |
|---|
| 單位 | 淡江大學物理學系 |
|---|
| 出版者 | Melville: A I P Publishing LLC |
|---|
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 117(14), 144503 |
|---|
| 摘要 | Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τr, extracted from the TRPL profile shows ∼T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature. |
|---|
| 關鍵字 | |
|---|
| 語言 | 英文(美國) |
|---|
| ISSN | 0021-8979 |
|---|
| 期刊性質 | 國外 |
|---|
| 收錄於 | SCI; |
|---|
| 產學合作 | |
|---|
| 通訊作者 | Jang, Der-Jun |
|---|
| 審稿制度 | 否 |
|---|
| 國別 | 美國 |
|---|
| 公開徵稿 | |
|---|
| 出版型式 | ,紙本 |
|---|
| 相關連結 | |
|---|
|
Google+ 推薦功能，讓全世界都能看到您的推薦！
