標題:Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure |
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學年 | 103 |
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學期 | 2 |
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出版(發表)日期 | 2015/04/14 |
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作品名稱 | Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure |
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作品名稱(其他語言) | |
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著者 | Antaryami Mohanta; Wang, Shiang-Fu; Young, Tai-Fa; Yeh, Ping-Hung; Ling, Dah-Chin; Lee, Meng-En; Jang, Der-Jun |
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單位 | 淡江大學物理學系 |
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出版者 | Melville: A I P Publishing LLC |
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著錄名稱、卷期、頁數 | Journal of Applied Physics 117(14), 144503 |
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摘要 | Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τr, extracted from the TRPL profile shows ∼T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature. |
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關鍵字 | |
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語言 | 英文(美國) |
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ISSN | 0021-8979 |
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期刊性質 | 國外 |
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收錄於 | SCI; |
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產學合作 | |
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通訊作者 | Jang, Der-Jun |
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審稿制度 | 否 |
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國別 | 美國 |
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公開徵稿 | |
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出版型式 | ,紙本 |
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相關連結 | |
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