教師資料查詢 | 類別: 研究報告 | 教師: 許世杰 Hsu, Shih-chieh (瀏覽個人網頁)

標題:具有奈米級微結構表面之高亮度垂直式氮化鎵發光二極體元件製作-子計畫三新型基板轉移技術應用於垂直式發光二極體元件之研究(I)
學年101
學期1
出版(發表)日期2012/08/01
作品名稱具有奈米級微結構表面之高亮度垂直式氮化鎵發光二極體元件製作-子計畫三新型基板轉移技術應用於垂直式發光二極體元件之研究(I)
作品名稱(其他語言)The Study of Applying the Novel Substrate Transferring Technique to Vertical LEDs
著者許世杰; 程育人
單位淡江大學化學工程與材料工程學系
描述計畫編號NSC101-2623-E032-002-ET ;
研究期間201208~201307 ;
研究經費805,000
委託單位行政院國家科學委員會
摘要This project aims at developing a highly bright and vertical GaN LED with nano-scale microstructure surface. Our group is responsible for Subproject 3, the part of applying new substrate transferring technique to vertical LED device. This project will be executed for 2 years. In the first year, we anticipate to develop the process technique of selective electroplating, which is expected to perfectly reach the goal of expected chip definition and the process of cutting, to avoid future issues of yield declination and structure damage when processing cutting after completion of the chip. And then, we apply the chemical lift-off to the electroplated LED wafer. In this way, we use KOH solution to etch the nano-pillar structure on the GaN LED to finish the substrate transferring and reserve the nano-scale surface texture to enhance light extraction efficiency. After finishing the project, we will be able to successfully transfer the GaN epitaxial layer to the Cu substrate which has highly electric and thermal conductivity. Thus, we are capable to produce the highly bright and vertical GaN LED of large-size and high-efficiency chips. Besides, the method we adopt is simple and low cost, so it can be massively produced. We expect that this technique can finally be applied to the industrial world to provide the best choice for producing the process of the vertical GaN LED.;本總計畫旨在開發一具有奈米級微結構表面之高亮度垂直式氮化鎵發光二極體,本團隊則負責子計畫三中的新型基板轉移技術應用於垂直式發光二極體元件之部分,此計畫將分成兩年來實行。在第一年中我們預計開發選擇性電鍍的製程技術,此一技術希望能夠完美的做到預先晶粒定義和切割的製程,避免日後晶粒完成後再進行切割會造成的良率減少和結構損傷等問題。接著將電鍍完成後的LED晶圓進行化學性蝕刻剝離製程,以強鹼溶液蝕刻掉氮化鎵晶圓上的奈米柱狀結構,完成基板轉移的目的,並保有氮化鎵LED上的奈米級粗化表面,以增進光粹取效率。計畫完成之後,我們將能夠成功的將氮化鎵磊晶層轉移到高導電性、高散熱性的銅基板上,故擁有製作大尺寸、高效率的高亮度垂直式氮化鎵發光二極體之能力,且我們採用的製程方法簡單而且成本低廉,更可以大量的進行生產,我們期望此一技術最終能與業界結合,提供未來製作垂直式氮化鎵發光二極體元件的最佳選擇。
關鍵字電鍍; 垂直式發光二極體; 銅基板; 化學蝕刻剝離; lectroplating; vertical LED; Cu substrate; chemical lift-off
語言中文
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