教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:The role of nanographitic phase on enhancing the electron field emission properties of hybrid granular structured diamond films: the electron energy loss spectroscopic studies
學年103
學期1
出版(發表)日期2014/10/01
作品名稱The role of nanographitic phase on enhancing the electron field emission properties of hybrid granular structured diamond films: the electron energy loss spectroscopic studies
作品名稱(其他語言)
著者Joji Kurian; Kamatchi Jothiramalingam Sankaran; Joseph P Thomas; Tai, N H; Chen, Huang-Chin; Lin, I-Nan; 林諭男
單位淡江大學物理學系
出版者Bristol: Institute of Physics Publishing Ltd.
著錄名稱、卷期、頁數Journal of Physics D: Applied Physics 47(41), 415303(14pages)
摘要The electron field emission (EFE) properties of the hybrid granular structured diamond (HiD) films were markedly improved by N-ion implantation and annealing processes. The evolution of microstructure/bonding structure of the films due to these processes was investigated using the transmission electron microscopy (TEM) and the electron energy loss spectroscopy (EELS), respectively. The N-ion implanted/annealed HiD films showed a low turn-on field of (E0)HiD = 7.4 V µm−1 with large current density of (Je)HiD = 600 µA cm−2, at 17.8 V µm−1, compared with pristine HiD films ((E0) = 10.3 V µm−1, (Je) = 95 µA cm−2 at the same applied field). While the TEM studies revealed only the microstructural evolution due to N-ion implantation/annealing processes, the EELS elucidated the change in bonding structure, namely the transformation between the sp3-bonded carbons and the sp2-bonded ones. Therefore, the combined TEM/EELS analyses provided more insight into understand the mechanism by which the N-ion implantation/annealing processes enhanced the EFE properties of HiD films. These studies clearly demonstrated that the N-ion implantation/annealing processes induced the formation of nanographitic clusters. These nanographitic phases form an interconnected path throughout the film surface facilitating the easy transport of electrons and thereby markedly enhancing the EFE properties for the N implanted/annealed HiD films.
關鍵字
語言英文
ISSN0022-3727
期刊性質國外
收錄於
產學合作
通訊作者Tai, N H; Lin, I-Nan
審稿制度
國別英國
公開徵稿
出版型式
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