教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect
學年102
學期1
出版(發表)日期2014/01/01
作品名稱The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect
作品名稱(其他語言)
著者Lin, Sheng-Chang; Yeh, Chien-Jui; Joji Kurian; Dong, Chung-Li; Huan Niu; Leou, Keh-Chyang; Lin, I.-Nan; 林諭男
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Journal of Applied Physics 116, 183701(11pages)
摘要The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. The difference of interaction that the UNCD content undergoes along the trajectory of the incident P-ions is reflected in the alteration of the granular structure. In regions where the P-ions reside, the “interacting zone,” which is found at about 300 nm beneath the surface of the films, coalescence of diamond grains occurs inducing nano-graphitic clusters. The annealing at 600 °C (or 800 °C) heals the defects and, in some cases, forms interconnected graphitic filaments that result in the decrease in surface resistance. However, the annealing at 600 °C (800 °C) induces marked UNCD-to-Si layers interaction. This interaction due to the annealing processes hinders the electron transport across the interface and degrades the electron field emission properties of the UNCD films. These microstructural evolution processes very well account for the phenomenon elaborating that, in spite of enhanced conductivity of the UNCD films along the film's surface due to the P-ion implantation and annealing processes, the electron field emission properties for these UNCD films do not improve.
關鍵字
語言英文
ISSN0021-8979
期刊性質國外
收錄於
產學合作
通訊作者Leou, Keh-Chyang; Lin, I.-Nan
審稿制度
國別美國
公開徵稿
出版型式,電子版,紙本
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