教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Origin of graphitic filaments on improving the electron field emission properties of negative bias-enhanced grown ultrananocrystalline diamond films in CH4/Ar plasma
學年102
學期1
出版(發表)日期2014/01/01
作品名稱Origin of graphitic filaments on improving the electron field emission properties of negative bias-enhanced grown ultrananocrystalline diamond films in CH4/Ar plasma
作品名稱(其他語言)
著者K. J. Sankaran; Huang, B. R.; A. Saravanan; Tai, N. H.; Lin, I. N.
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Journal of Applied Physics 116, 163102(10pages)
摘要Microstructural evolution of bias-enhanced grown (BEG) ultrananocrystalline diamond (UNCD) films has been investigated using microwave plasma enhanced chemical vapor deposition in gas mixtures of CH4 and Ar under different negative bias voltages ranging from −50 to −200 V. Scanning electron microscopy and Raman spectroscopy were used to characterize the morphology, growth rate, and chemical bonding of the synthesized films. Transmission electron microscopic investigation reveals that the application of bias voltage induced the formation of the nanographitic filaments in the grain boundaries of the films, in addition to the reduction of the size of diamond grains to ultra-nanosized granular structured grains. For BEG-UNCD films under −200 V, the electron field emission (EFE) process can be turned on at a field as small as 4.08 V/μm, attaining a EFE current density as large as 3.19 mA/cm2 at an applied field of 8.64 V/μm. But the films grown without bias (0 V) have mostly amorphous carbon phases in the grain boundaries, possessing poorer EFE than those of the films grown using bias. Consequently, the induction of nanographitic filaments in grain boundaries of UNCD films grown in CH4/Ar plasma due to large applied bias voltage of −200 V is the prime factor, which possibly forms interconnected paths for facilitating the transport of electrons that markedly enhance the EFE properties.
關鍵字
語言英文
ISSN0021-8979
期刊性質國外
收錄於
產學合作
通訊作者Tai, N. H.; Lin, I. N.
審稿制度
國別美國
公開徵稿
出版型式
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