教師資料查詢 | 類別: 期刊論文 | 教師: 許世杰 Hsu, Shih-chieh (瀏覽個人網頁)

標題:Stress relaxation in GaN by transfer bonding on Si substrates
學年96
學期1
出版(發表)日期2007/12/01
作品名稱Stress relaxation in GaN by transfer bonding on Si substrates
作品名稱(其他語言)
著者Hsu, S. C.; Pong, B. J.; Li, W. H.; Beechem, Thomas E., III; Graham, Samuel; Liu, C. Y.
單位淡江大學化學工程與材料工程學系
出版者American Institute of Physics
著錄名稱、卷期、頁數Applied Physics Letters 91(25), 251114 (3 pages)
摘要The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 μm, the high compressive stress state in GaN layer was relieved. A 10 μm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ~85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed.
關鍵字III-V semiconductors;Quantum wells;III-V semiconductors;Quantum wells;Elasticity and anelasticity;stress-strain relations;III-V;II-VI semiconductors
語言英文
ISSN0003-6951
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收錄於SCI
產學合作
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