教師資料查詢 | 類別: 期刊論文 | 教師: 許世杰HSU, SHIH-CHIEH (瀏覽個人網頁)

標題:High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
學年97
學期2
出版(發表)日期2009/07/01
作品名稱High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
作品名稱(其他語言)
著者Lo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C.
單位淡江大學化學工程與材料工程學系
出版者American Institute of Physics
著錄名稱、卷期、頁數Applied Physics Letters 95(4), 041109 (3 pages)
摘要We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.
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語言英文
ISSN0003-6951
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收錄於SCI
產學合作
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