教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Using an Au interlayer to enhance electron field emission properties of ultrananocrystalline diamond films
學年101
學期1
出版(發表)日期2012/11/15
作品名稱Using an Au interlayer to enhance electron field emission properties of ultrananocrystalline diamond films
作品名稱(其他語言)
著者Chen, H. C.; K. J. Sankaran; Lo, S.C.; Lin, L.J.; Tai, N.H.; Lee, C. Y.; Lin, I.N.
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Journal of Applied Physics 112(10), 103711(10pages)
摘要We observe that an Au interlayer markedly enhances the electrical field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films on Si substrates. The EFE properties of UNCD/Au/Si films can be turned on at a lower field and attain a higher current density than in UNCD films grown on Si substrates without an Au interlayer. Transmission electron microscopy reveals that the Au interlayer induces the formation of SiC clusters, preventing the formation of a resistive amorphous carbon layer that nucleates the diamond clusters. This improves the diamond-to-substrate interfacial conductivity. Moreover, there is an abundant nano-graphite phase, which is presumably induced by the coalescence of nano-sized diamond clusters. The percolation of the nano-graphite clusters helps transport electrons, improving the conductivity of the UNCD films. We believe that the simultaneous increase in the conductivity of the UNCD-to-Si interface and the bulk of the UNCD films is the main factor enhancing electrical conductivity and EFE properties of the films.
關鍵字diamond;electrical conductivity;electron field emission;elemental semiconductors;gold;nanostructured materials;percolation;transmission electron microscopy;wide band gap semiconductors
語言英文
ISSN0021-8979
期刊性質國外
收錄於SCI
產學合作
通訊作者
審稿制度
國別美國
公開徵稿
出版型式電子版
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