| Fabrication of free-standing highly conducting ultrananocrystalline diamond films with enhanced electron field emission properties | |
|---|---|
| 學年 | 101 |
| 學期 | 1 |
| 出版（發表）日期 | 2012-12-10 |
| 作品名稱 | Fabrication of free-standing highly conducting ultrananocrystalline diamond films with enhanced electron field emission properties |
| 作品名稱（其他語言） | |
| 著者 | K.J. Sankaran; Chen, H.C.; Lee, C.Y.; Tai, N.H.; Lin, I.N. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Applied Physics Letters 101(24), 241604(4pages) |
| 摘要 | Fabrication of free-standing/highly conducting ultrananocrystalline diamond (fc-UNCD) films at low growth temperature (<475 °C) is demonstrated. The fc-UNCD films show high conductivity of σ = 146 (Ω cm)−1 with superior electron field emission (EFE) properties, viz. low turn-on field of 4.35 V/μm and high EFE current density of 3.76 mA/cm2 at an applied field of 12.5 V/μm. Transmission electron microscopy examinations reveal the presence of Au/Cu clusters in film-to-substrate interface, which consequences in the induction of nanographite phases, surrounding the diamond grains that form conduction channels for electrons transport, ensuing in marvelous EFE properties of fc-UNCD films. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1077-3118 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Tai, N. H.; Lin, I. N. |
| 審稿制度 | 是 |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100067 ) |
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