教師資料查詢 | 類別: 期刊論文 | 教師: 彭維鋒 Pong, Way-faung (瀏覽個人網頁)

標題:Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping
學年101
學期2
出版(發表)日期2013/02/01
作品名稱Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping
作品名稱(其他語言)
著者Chang, Cheng-Kai; Satender Kataria; Kuo, Chun-Chiang; Abhijit Ganguly; Wang, Bo-Yao; Hwang, Jeong-Yuan; Huang, Kay-Jay; Yang, Wei-Hsun; Wang, Sheng-Bo; Chuang, Cheng-Hao; Chen, Mi; Huang, Ching-I; Pong, Way-Faung; Song, Ker-Jar; Chang, Shoou-Jinn; Guo, Jing-Hua; Tai, Yian; Masahiko Tsujimoto; Seiji Isoda; Chen, Chun-Wei; Chen, Li-Chyong; Chen, Kuei-Hsien
單位淡江大學物理學系
出版者Washington, DC: American Chemical Society
著錄名稱、卷期、頁數ACS Nano 7(2), pp.1333–1341
摘要Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV–vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π–π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.
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語言
ISSN1936-0851;1936-086X
期刊性質國外
收錄於SCI;
產學合作
通訊作者
審稿制度
國別美國
公開徵稿
出版型式電子版,紙本
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