教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Direct observation of enhanced emission sites in nitrogen implanted hybrid structured ultrananocrystalline diamond films
學年101
學期2
出版(發表)日期2013/02/01
作品名稱Direct observation of enhanced emission sites in nitrogen implanted hybrid structured ultrananocrystalline diamond films
作品名稱(其他語言)
著者Kalpataru Panda; Chen, Huang-Chin; Sundaravel B.; Panigrahi, B. K.; Lin, I-Nan
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Journal of Applied Physics 113(5), 054311(8pages)
摘要A hybrid-structured ultrananocrystalline diamond (h-UNCD) film, synthesized on Si-substrates by a two-step microwave plasma enhanced chemical vapour deposition (MPECVD) process, contains duplex structure with large diamond aggregates evenly dispersed in a matrix of ultra-small grains (∼5 nm). The two-step plasma synthesized h-UNCD films exhibit superior electron field emission (EFE) properties than the one-step MPECVD deposited UNCD films. Nitrogen-ion implantation/post-annealing processes further improve the EFE properties of these films. Current imaging tunnelling spectroscopy in scanning tunnelling spectroscopy mode directly shows increased density of emission sites in N implanted/post-annealed h-UNCD films than as-prepared one. X-ray photoelectron spectroscopy measurements show increased sp2 phase content and C–N bonding fraction in N ion implanted/post-annealed films. Transmission electron microscopic analysis reveals that the N implantation/post-annealing processes induce the formation of defects in the diamond grains, which decreases the band gap and increases the density of states within the band gap of diamond. Moreover, the formation of nanographitic phase surrounding the small diamond grains enhanced the conductivity at the diamond grain boundaries. Both of the phenomena enhance the EFE properties.
關鍵字Diamond; Elemental semiconductors; Thin film structure; Grain boundaries; Thin films
語言
ISSN0021-8979;1089-7550
期刊性質國外
收錄於
產學合作
通訊作者
審稿制度
國別美國
公開徵稿
出版型式紙本;電子版
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