教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment
學年101
學期2
出版(發表)日期2013/05/01
作品名稱Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment
作品名稱(其他語言)
著者Ko, Tin-Yu; Liu, Yu-Lin; Sun, Kien-Wen; Lin, Yi-Jie; Fong, Shih-Chieh; Lin, I-Nan; Tai, Nyan-Hwa
單位淡江大學物理學系
出版者Lausanne: Elsevier S.A.
著錄名稱、卷期、頁數Diamond and Related Materials 35, pp.36-39
摘要Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films.
關鍵字Ultrananocrystalline diamond; Nitrogen vacancy; Plasma; Photoluminescence; Color center
語言
ISSN0925-9635
期刊性質國外
收錄於
產學合作
通訊作者Sun, Kien-Wen
審稿制度
國別瑞士
公開徵稿
出版型式紙本
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