教師資料查詢 | 類別: 會議論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Fabrication of nitrogen-doped ultrananocrystalline diamond nanowire arrays with enhanced field emission and plasma illumination performance
學年100
學期2
發表日期2012/07/09
作品名稱Fabrication of nitrogen-doped ultrananocrystalline diamond nanowire arrays with enhanced field emission and plasma illumination performance
作品名稱(其他語言)
著者Chang, Ting-Hsun; Lou, Shiu-Cheng; Tai, Nyan-Hua; Sankaran, K.J.; Chen, Chulung; Lin, I-Nan
作品所屬單位淡江大學物理學系
出版者
會議名稱Vacuum Nanoelectronics Conference (IVNC), 2012 25th International
會議地點Jeju, Korea
摘要Large-area silicon nanowire arrays (SiNAs) were fabricated via metal catalytic etching technique, in conjunction with the polystyrene spheres lithographic process. The nitrogen-doped ultrananocrystalline diamond (N2-UNCD) films were coated on thus formed SiNA by using microwave plasma chemical vapor deposition (MPECVD) process. The N2-UNCD/SiNWs films, which were grown in CH4/N2 plasma at 700°C, possess markedly better conductivity (σN2-UNCD=2-3(Ω cm)-1) than the conventional c-UNCD/SiNWs films, which were grown in CH4/Ar plasma at around 425°C (σUNCD=0.01(Ω cm)-1). The EFE process of the former materials can be turned on at (E0)N2-UNCD=7.80 V/μm achieving larger EFE current density of (Je)N2-UNCD=0.67 mA/cm2 at an applied field of 13.0 V/μm, whereas that of the latter materials need (E0)=UNCD=18.25 V/μm to turn on, attaining only (Je)UNCD=0.024 mA/cm2 at same applied field. While the plasma illumination process can be triggered at around 0.21 V/μm, regardless of the characteristics of the cathod materials, plasma illumination intensity/current density is larger when the materials with better EFE properties were used as cathodes for the plasma device. The plasma illumination current density is around (Jpi)N2-UNCD=5.0 mA/cm2 (at an applied field of 0.35 V/μm) when N2-UNCD/SiNWs film was used as cathode, whereas the (Jpi)UNCD=3.2 mA/cm2 when the conventional UNCD/SiNWs film was used as cathode. In summary, it is observed that the plasma illumination characteristics of the CP-devices is closely correlated with the electron field emission behavior of the cathode materials, which, in turn, was enhanced - ue to the improvement in conductivity of the UNCD films
關鍵字nitrogen-doped ultrananocrystalline diamond (UNCD);silicon nanowire arrays (SiNAs)
語言英文
收錄於
會議性質
校內研討會地點
研討會時間20120709~20120713
通訊作者
國別韓國
公開徵稿
出版型式
出處Vacuum Nanoelectronics Conference (IVNC), 2012 25th International, pp.1-8
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