教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Structural and electrical properties of conducting diamond nanowires
學年101
學期1
出版(發表)日期2013/01/01
作品名稱Structural and electrical properties of conducting diamond nanowires
作品名稱(其他語言)
著者Kamatchi Jothiramalingam Sankaran; Lin, Yen-Fu; Jian, Wen-Bin; Chen, Huang-Chin; Kalpataru Panda; Balakrishnan Sundaravel; Dong, Chung-Li; Tai, Nyan-Hwa; Lin, I-Nan
單位淡江大學物理學系
出版者Washington: American Chemical Society
著錄名稱、卷期、頁數ACS Applied Materials and Interfaces 5(4), pp.1294-1301
摘要Conducting diamond nanowires (DNWs) films have been synthesized by N₂-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp³ diamond and sp² graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.
關鍵字diamond nanowire films; graphitic grain boundary; high resolution transmission electron microscopy; scanning tunneling spectroscopy; hopping transport; electron field emission
語言英文(美國)
ISSN1944-8244;1944-8252
期刊性質國外
收錄於
產學合作
通訊作者
審稿制度
國別美國
公開徵稿
出版型式紙本;電子版
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