教師資料查詢 | 類別: 會議論文 | 教師: 趙崇禮 CHAO CHOUNG-LII (瀏覽個人網頁)

標題:The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon
學年89
學期1
發表日期2000/11/01
作品名稱The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon
作品名稱(其他語言)
著者Chao, C. L.; Ma, K. J.; Liu, D. S.; Sheu, C. C.; Sheu, S. C.; Lin, Y. S.; Lin, H. Y.; Chang, F. Y.
作品所屬單位淡江大學機械與機電工程學系
出版者
會議名稱第四屆奈米工程暨微系統技術研討會
會議地點新竹縣, 臺灣
摘要In order to machine the 300mm-400mm silicon wafer to the specifiedsurface roughness and flatness, ELID diamond grinding were employed inthis study to investigate its feasibility. Cast iron fiber reinforceddiamond wheels were used to grind silicon wafers and various ELIDparameters were systematically tested to examine their influences onthe grinding process. The results showed that, under the same grindingconditions, the obtained surfaces were characterized by (1) thickpoly/amorphous layer with occasionally deep-penetrated cracks, (2)thick amorphous layer (up to 250nm) with distributed dislocation loops(-300nm into the substrate), and (3) thin amorphous layer (up to 30nm)when (1) no ELID, (2) ELID with rather low peak voltage and currentand (3) ELID with high peak voltage and current were applied in thegrinding processes.
關鍵字單晶矽;電解製程中修銳技術;研磨;表面形態;矽晶圓;Single Crystal Silicon;Electrolytic Inprocess Dressing;Grinding;Surface Morphology;Silicon Wafer
語言英文
收錄於
會議性質國內
校內研討會地點
研討會時間20001101~20001102
通訊作者
國別中華民國
公開徵稿Y
出版型式紙本
出處第四屆奈米工程暨微系統技術研討會論文集頁2-61-2-66
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