| Design of Low-Power Content Addressable Memory Cell | |
|---|---|
| 學年 | 92 |
| 學期 | 1 |
| 發表日期 | 2003-08-12 |
| 作品名稱 | Design of Low-Power Content Addressable Memory Cell |
| 作品名稱（其他語言） | |
| 著者 | Cheng, Kuo-Hsing; Wei, Chia-Hung; Wu, Chen-Lung |
| 作品所屬單位 | 淡江大學電機工程學系 |
| 出版者 | |
| 會議名稱 | 第十四屆超大型積體電路暨計算機輔助設計技術研討會=The 14th VLSI Design/CAD Symposium |
| 會議地點 | 花蓮縣, 臺灣 |
| 摘要 | Content Addressable Memory (CAM), a large amount of energy is generally expended charging and discharging most of the match lines on most cycles. In this paper, a new low-power CAM cell design is proposed to reduce the comparison power of CAM cell. Moreover, in the CAM word circuit design, a staticpseudo nMOS logic structure with a precomputation approach is used to effectively avoid the frequently switching in the match lines. The HSPICE simulation results are based on TSMC 0.25 m μ CMOS process with2.5 V supply voltage. The power consumption of the proposed CAM is 16.38 mW under 300 MHz operation frequency. Moreover, the power-performance metric is13.33 fJ/bit/search for random inputs. |
| 關鍵字 | 低功率;可定址記憶體記憶單元;滿足定址記憶體;隨機存取記憶體;非同步傳輸模式;Low power;Addressable memory cell;Content adddressable memory (CAM);Random-access memory (RAM);Asynchronous transfer mode (ATM) |
| 語言 | en |
| 收錄於 | |
| 會議性質 | 國內 |
| 校內研討會地點 | |
| 研討會時間 | 20030812~20030815 |
| 通訊作者 | |
| 國別 | TWN |
| 公開徵稿 | Y |
| 出版型式 | 紙本 |
| 出處 | 第十四屆超大型積體電路設計暨計算機輔設計技術研討會論文摘要集=Proceedings of The 14th VLSI Design/CAD Symposium，頁245-248 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/96035 ) |
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