教師資料查詢 | 類別: 期刊論文 | 教師: 陳俊男 Chen,Chun-nan (瀏覽個人網頁)

標題:Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor
學年101
學期1
出版(發表)日期2012/09/01
作品名稱Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor
作品名稱(其他語言)
著者Chen, Chun-Nan; Chang, Sheng-Hsiung; Su, Wei-Long; Jen, Jen-Yi; Li, Yiming
單位淡江大學物理學系
出版者Moscow: MAIK Nauka - Interperiodica
著錄名稱、卷期、頁數Semiconductors 46(9), pp.1126-1134
摘要In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.
關鍵字
語言英文
ISSN1063-7826
期刊性質國外
收錄於SCI
產學合作
通訊作者
審稿制度
國別俄羅斯
公開徵稿
出版型式紙本
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