| 標題：Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films |
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| 學年 | 97 |
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| 學期 | 2 |
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| 出版（發表）日期 | 2009/06/01 |
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| 作品名稱 | Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films |
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| 作品名稱（其他語言） | |
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| 著者 | Palathinkal, Thomas Joseph; Tai, Nyan-Hwa; Lee, Chi-Young; Niu, Huan; Cheng, Hsiu-Fung; Pong, Way-Faung; Lin, I-Nan |
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| 單位 | 淡江大學物理學系 |
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| 出版者 | Weinheim: Wiley - V C H Verlag GmbH & Co. KGaA |
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| 著錄名稱、卷期、頁數 | Plasma Processes and Polymers 6(1), pp.S834–S839 |
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| 摘要 | The effects of B and N ion implantation on structural and electron field emission (EFE) properties of ultra-nanocrystalline diamond (UNCD) films are reported. Low-dose (1012 ions/cm2) B ion implantation & annealing processes insignificantly changed the EFE properties, high-dose (1015 ions/cm2) ion implantation & annealing processes resulted in surface graphitization for UNCD films. While the field emission property of UNCD films was greatly improved due to the N ion implantation & annealing processes, they were degraded due to B ion implantations & annealing processes. Such a phenomenon is accounted for by the fact that N ions residing in grain boundaries can convert the UNCD grains into semi-conducting by charge-transfer process, whereas B ions react with carbon forming covalent bonds and are not transferring the charges with UNCD grains. |
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| 關鍵字 | electron field emission;films;ion implantation;UNCD;X-ray photoelectron spectroscopy |
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| 語言 | 英文 |
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| ISSN | 1612-8850; 1612-8869 |
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| 期刊性質 | 國外 |
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| 收錄於 | SCI;EI |
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| 產學合作 | |
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| 通訊作者 | Lin, I-Nan |
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| 審稿制度 | 是 |
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| 國別 | 德國 |
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| 公開徵稿 | |
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| 出版型式 | 紙本 |
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| 相關連結 | |
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