Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films
學年 97
學期 2
出版（發表）日期 2009-06-01
作品名稱 Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films
作品名稱（其他語言）
著者 Palathinkal, Thomas Joseph; Tai, Nyan-Hwa; Lee, Chi-Young; Niu, Huan; Cheng, Hsiu-Fung; Pong, Way-Faung; Lin, I-Nan
單位 淡江大學物理學系
出版者 Weinheim: Wiley - V C H Verlag GmbH & Co. KGaA
著錄名稱、卷期、頁數 Plasma Processes and Polymers 6(1), pp.S834–S839
摘要 The effects of B and N ion implantation on structural and electron field emission (EFE) properties of ultra-nanocrystalline diamond (UNCD) films are reported. Low-dose (1012 ions/cm2) B ion implantation & annealing processes insignificantly changed the EFE properties, high-dose (1015 ions/cm2) ion implantation & annealing processes resulted in surface graphitization for UNCD films. While the field emission property of UNCD films was greatly improved due to the N ion implantation & annealing processes, they were degraded due to B ion implantations & annealing processes. Such a phenomenon is accounted for by the fact that N ions residing in grain boundaries can convert the UNCD grains into semi-conducting by charge-transfer process, whereas B ions react with carbon forming covalent bonds and are not transferring the charges with UNCD grains.
關鍵字 electron field emission;films;ion implantation;UNCD;X-ray photoelectron spectroscopy
語言 en
ISSN 1612-8850; 1612-8869
期刊性質 國外
收錄於 SCI EI
產學合作
通訊作者 Lin, I-Nan
審稿制度 是
國別 DEU
公開徵稿
出版型式 紙本
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