教師資料查詢 | 類別: 期刊論文 | 教師: 陳俊男 Chen,Chun-nan (瀏覽個人網頁)

標題:Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices
學年98
學期1
出版(發表)日期2009/09/01
作品名稱Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices
作品名稱(其他語言)
著者Chai, Yen-Hsin; Yarn, Kao-Feng; Chen, Chun-Nan
單位淡江大學物理學系
出版者Bucharest: Institute of Materials Physics
著錄名稱、卷期、頁數Digest Journal of Nanomaterials and Biostructures 4(3), pp.519-530
摘要The band structures of (001), (111), and (110) InAs/GaSb superlattices in the semimetal regime are studied using a modified bond orbital model. The anti-crossing behavior between the sub-bands as well as the semiconductor-semimetal transition will be analyzed in detail, and is shown to be strongly dependent on the growth direction. The effects of interface hetero-bonds (In-Sb and Ga-As) on the InAs/GaSb superlattices are also discussed.
關鍵字Semimetal; Anti-crossing; Interface effect; Bond orbital model; Superlattice; InAs/GaSb
語言英文
ISSN1842-3582
期刊性質國外
收錄於SCI
產學合作
通訊作者Chai, Yen-Hsin
審稿制度
國別羅馬尼亞
公開徵稿
出版型式電子版
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