| Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices | |
|---|---|
| 學年 | 98 |
| 學期 | 1 |
| 出版（發表）日期 | 2009-09-01 |
| 作品名稱 | Microscopic Interface Effect on Anti-Crossing Behavior and Semiconductor-Semimetal Transition in InAs/GaSb Superlattices |
| 作品名稱（其他語言） | |
| 著者 | Chai, Yen-Hsin; Yarn, Kao-Feng; Chen, Chun-Nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | Bucharest: Institute of Materials Physics |
| 著錄名稱、卷期、頁數 | Digest Journal of Nanomaterials and Biostructures 4(3), pp.519-530 |
| 摘要 | The band structures of (001), (111), and (110) InAs/GaSb superlattices in the semimetal regime are studied using a modified bond orbital model. The anti-crossing behavior between the sub-bands as well as the semiconductor-semimetal transition will be analyzed in detail, and is shown to be strongly dependent on the growth direction. The effects of interface hetero-bonds (In-Sb and Ga-As) on the InAs/GaSb superlattices are also discussed. |
| 關鍵字 | Semimetal; Anti-crossing; Interface effect; Bond orbital model; Superlattice; InAs/GaSb |
| 語言 | en |
| ISSN | 1842-3582 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Chai, Yen-Hsin |
| 審稿制度 | 是 |
| 國別 | ROU |
| 公開徵稿 | |
| 出版型式 | 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/91610 ) |
| SDGS | 永續城市與社區,可負擔的潔淨能源,產業創新與基礎設施 |
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