Theory for Slightly Doped Antiferromagnetic Mott Insulators | |
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學年 | 91 |
學期 | 2 |
出版(發表)日期 | 2003-02-01 |
作品名稱 | Theory for Slightly Doped Antiferromagnetic Mott Insulators |
作品名稱(其他語言) | |
著者 | Lee, T. K.; Ho, Chang-ming; Nagaosa, Naoto |
單位 | 淡江大學物理學系 |
出版者 | College Park: American Physical Society |
著錄名稱、卷期、頁數 | Physical Review Letters 90(6), 067001(4 pages) |
摘要 | New trial wave functions, constructed explicitly from the unique Mott insulating state with antiferromagnetic order, are proposed to describe the ground state of a Mott insulator slightly doped with holes or electrons. A rigid band is observed as charged quasiparticles with well-defined momenta being realized in these states. These states have much less superconducting correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high T(c) cuprates doped lightly with holes or electrons. |
關鍵字 | |
語言 | en |
ISSN | 0031-9007 1079-7114 |
期刊性質 | 國外 |
收錄於 | SCI |
產學合作 | |
通訊作者 | Ho, Chang-Ming |
審稿制度 | |
國別 | USA |
公開徵稿 | |
出版型式 | 紙本 電子版 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27869 ) |