教師資料查詢 | 類別: 期刊論文 | 教師: 何昌明 CHANG-MING HO (瀏覽個人網頁)

標題:Theory for Slightly Doped Antiferromagnetic Mott Insulators
學年91
學期2
出版(發表)日期2003/05/01
作品名稱Theory for Slightly Doped Antiferromagnetic Mott Insulators
作品名稱(其他語言)
著者Lee, T.-K.; Ho, Chang-ming; Nagaosa, Naoto; Lee, Wei-Cheng
單位淡江大學物理學系
出版者New York: Springer New York LLC
著錄名稱、卷期、頁數Journal of Low Temperature Physics 131(3-4), pp.169-179
摘要New trial wave functions, constructed explicitly from the unique Mott insulating state with antiferromagnetic order, are proposed to describe the ground state of a Mott insulator slightly doped with holes or electrons. A rigid band is observed as charged quasiparticles with well-defined momenta being realized in these states. These states have much less superconducting correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high T(c) cuprates doped lightly with holes or electrons.
關鍵字
語言英文
ISSN0022-2291
期刊性質國外
收錄於SCI
產學合作
通訊作者Ho, Chang-Ming
審稿制度
國別美國
公開徵稿
出版型式紙本
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