| Theory for Slightly Doped Antiferromagnetic Mott Insulators | |
|---|---|
| 學年 | 91 |
| 學期 | 2 |
| 出版（發表）日期 | 2003-05-01 |
| 作品名稱 | Theory for Slightly Doped Antiferromagnetic Mott Insulators |
| 作品名稱（其他語言） | |
| 著者 | Lee, T.-K.; Ho, Chang-ming; Nagaosa, Naoto; Lee, Wei-Cheng |
| 單位 | 淡江大學物理學系 |
| 出版者 | New York: Springer New York LLC |
| 著錄名稱、卷期、頁數 | Journal of Low Temperature Physics 131(3-4), pp.169-179 |
| 摘要 | New trial wave functions, constructed explicitly from the unique Mott insulating state with antiferromagnetic order, are proposed to describe the ground state of a Mott insulator slightly doped with holes or electrons. A rigid band is observed as charged quasiparticles with well-defined momenta being realized in these states. These states have much less superconducting correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high T(c) cuprates doped lightly with holes or electrons. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0022-2291 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Ho, Chang-Ming |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72597 ) |
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