教師資料查詢 | 類別: 期刊論文 | 教師: 彭維鋒 Pong, Way-faung (瀏覽個人網頁)

標題:X-ray absorption spectroscopic study on Ti/n-GaN
學年94
學期1
出版(發表)日期2005/10/01
作品名稱X-ray absorption spectroscopic study on Ti/n-GaN
作品名稱(其他語言)
著者Kumar, M. Senthil; Kumar, V. Sures; Asokan, K.;Chiou, J. W. ;Jan, J. C.; Pong, Way-faung ;Kumar, J.
單位淡江大學物理學系
出版者Weinheim: Wiley - VCH Verlag GmbH & Co. KGaA
著錄名稱、卷期、頁數Physica Status Solidi. A: Applications and Materials Science 202(14), pp.R161-R163
摘要Formation of low resistance and thermally stable ohmic contacts to GaN is of considerable importance for device applications. Several metallization schemes for ohmic contacts to n-GaN with low contact resistance have been proposed and investigated by different techniques. We investigate 500 Å Ti/n-GaN contacts of as-deposited and rapid furnace annealed at 900 °C for 30 s, using X-ray diffraction pattern, I–V measurements, and X-ray absorption near edge spectra at Ti K- and L3,2-edges and elucidate the mechanism responsible for the high ohmic behaviour. These measurements indicate the formation of an interfacial TixN layer and intermetallic alloys of Ti and Ga at the Ti/n-GaN interface upon high temperature annealing.
關鍵字
語言英文
ISSN1862-6300
期刊性質國外
收錄於SCI
產學合作
通訊作者
審稿制度
國別德國
公開徵稿
出版型式紙本
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