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標題:Electronic and atomic structures of the Si-C-N thin film by x-ray-absorption spectroscopy and theoretical calculations
學年87
學期1
出版(發表)日期1998/10/01
作品名稱Electronic and atomic structures of the Si-C-N thin film by x-ray-absorption spectroscopy and theoretical calculations
作品名稱(其他語言)
著者Chang, Y. K.; Hsieh, H. H.; Pong, Way-faung; Tsai, M.-H.; Lee, K. H.; Dann, T. E.; Chien, F. Z.; Tseng, P. K.; Tsang, K. L.; Su, W. K.; Chen, L. C.; Wei, S. L.; Chen, K. H.; Bhusari, D. M.; Chen, Y. F.
單位淡江大學物理學系
出版者College Park: American Physical Society
著錄名稱、卷期、頁數Physical Review B (Condensed Matter) 58(14), pp.9018-9024
摘要This study measures the x-ray-absorption spectra of a crystalline ~c!-Si-C-N thin film at the C and Si K edge using the sample drain current mode and at the N K edge using the fluorescence mode. A resonance peak resembling the C 1s core exciton in the chemical-vapor-deposition-diamond/Si is observed. In addition, a broad feature is found in the energy range between ;290 and 305 eV, which can be assigned to the antibonding C 2p-Si 3sp hybridized states and the C 2p-N 2sp hybridized states as well. The fact that the resonance peak is located ;1.5 eV below the C 1s ionization energy suggests that the Frenkel-type exciton model can appropriately describe the core exciton of carbon atoms in c-Si-C-N. Closely examining the N K edge near edge absorption spectra reveals similar features in both c-Si-C-N and a-Si3N4, indicating that nitrogen atoms generally have a similar local environment in these two materials. Moreover, results obtained from Si K-edge absorption spectra of c-Si-C-N demonstrate a proportional combination of local Si-N and Si-C bonds associated with the local tetrahedral C-Si-N3 arrangement as well as the long-range ordered atomic structure around Si atoms. Theoretical calculations using the first-principles pseudofunction method are also presented and compared with experimental data.
關鍵字
語言英文
ISSN0163-1829;1095-3795
期刊性質國外
收錄於SCI
產學合作
通訊作者Pong, W. F.
審稿制度
國別美國
公開徵稿
出版型式紙本;電子版
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