教師資料查詢 | 類別: 期刊論文 | 教師: 葉炳宏 Ping-hung Yeh (瀏覽個人網頁)

標題:Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties
學年96
學期1
出版(發表)日期2007/08/01
作品名稱Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties
作品名稱(其他語言)
著者Huang, C. T.; Hsin, C. L.; Huang, K. W.; Lee, C. Y.; Yeh, P. H.; Chen, U. S.; Chen, L. J.
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Applied Physics Letters 91(9), 093133(3 pages)
摘要Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3∙6H2O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5×10−2 Ω cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.
關鍵字electrical resistivity;electron field emission;elemental semiconductors;erbium;nanowires;photoluminescence;semiconductor growth;semiconductor quantum wires;silicon;vapour deposition
語言英文
ISSN0003-6951;1077-3118
期刊性質國外
收錄於SCI
產學合作
通訊作者Chen, L. J.
審稿制度
國別美國
公開徵稿
出版型式紙本;電子版
相關連結
Google+ 推薦功能,讓全世界都能看到您的推薦!