| 標題：Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties |
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| 學年 | 96 |
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| 學期 | 1 |
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| 出版（發表）日期 | 2007/08/01 |
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| 作品名稱 | Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties |
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| 作品名稱（其他語言） | |
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| 著者 | Huang, C. T.; Hsin, C. L.; Huang, K. W.; Lee, C. Y.; Yeh, P. H.; Chen, U. S.; Chen, L. J. |
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| 單位 | 淡江大學物理學系 |
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| 出版者 | College Park: American Institute of Physics |
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| 著錄名稱、卷期、頁數 | Applied Physics Letters 91(9), 093133(3 pages) |
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| 摘要 | Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3∙6H2O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5×10−2 Ω cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices. |
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| 關鍵字 | electrical resistivity;electron field emission;elemental semiconductors;erbium;nanowires;photoluminescence;semiconductor growth;semiconductor quantum wires;silicon;vapour deposition |
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| 語言 | 英文 |
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| ISSN | 0003-6951;1077-3118 |
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| 期刊性質 | 國外 |
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| 收錄於 | SCI |
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| 產學合作 | |
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| 通訊作者 | Chen, L. J. |
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| 審稿制度 | |
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| 國別 | 美國 |
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| 公開徵稿 | |
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| 出版型式 | 紙本;電子版 |
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| 相關連結 | |
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