Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties
學年 96
學期 1
出版（發表）日期 2007-08-01
作品名稱 Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties
作品名稱（其他語言）
著者 Huang, C. T.; Hsin, C. L.; Huang, K. W.; Lee, C. Y.; Yeh, P. H.; Chen, U. S.; Chen, L. J.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 91(9), 093133(3 pages)
摘要 Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3∙6H2O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5×10−2 Ω cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.
關鍵字 electrical resistivity;electron field emission;elemental semiconductors;erbium;nanowires;photoluminescence;semiconductor growth;semiconductor quantum wires;silicon;vapour deposition
語言 en
ISSN 0003-6951 1077-3118
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Chen, L. J.
審稿制度
國別 USA
公開徵稿
出版型式 紙本 電子版
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